Study for the non-contact characterization of metallization ageing of power electronic semiconductor devices using the eddy current technique
Microelectronics Reliability 51 (2011) 1127–1135.
The ageing of the metallization layers of power semiconductor dies may be the cause of failure of power
semiconductor modules. Usual indicators of failure like on-state voltage drops make it difficult to high
light the deterioration of the metallization layer. In this study, we evaluate the relevance of the characterization of power device metallizations by means of the eddy current sensors. Experimental results
show the ability to monitor the state and the evolution of the metallization ageing with such a technique.